1 spst reflective algaas pin diode switch rev. v5 ma4agsw1 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. features ?? ultra broad bandwidth : 50 mhz to 50 ghz ?? functional bandwidth : 50 mhz to 70 ghz ?? 0.3 db insertion loss ?? 46 db isolation at 50 ghz ?? low current consumption ? -5v for low loss state ? +10ma for isolation state ?? m/a-com tech?s unique algaas hetero-junction anode technology ?? silicon nitride passivation ?? polymer scratch protection ?? rohs compliant* and 260c reflow compatible description the ma4agsw1 is an aluminum-gallium-arsenide, single pole, single throw (spst), pin diode switch. the switch features enhanced algaas anodes which are formed using m/a-com tech?s patented hetero- junction technology. this technology produces a switch with less loss than conventional gaas proc- esses. as much as a 0.3 db reduction in insertion loss can be realized at 50ghz. these devices are fabricated on an omcvd epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. the diodes themselves exhibit low series resistance, low capacitance, and fast switching speed. they are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. the protective coating prevents damage to the diode junction and anode air-bridges during handling and assembly. off chip bias circuitry is required. applications the high electron mobility of algaas and the low capacitance of the pin diodes makes this switch ideal for fast switching, high frequency, multi-throw switch designs. these algaas pin switches are use in switching arrays for radar systems, radiometers, test equipment and other multi-assembly compo- nents. yellow areas indicate bond pads j1 j2 absolute maximum ratings @ t amb = +25c parameter maximum rating operating temperature -55c to +125c storage temperature -55c to +150c incident c.w. rf power +23dbm c.w. breakdown voltage 25v bias current 25ma junction temperature +150c * restrictions on hazardous substanc es, european union directive 2002/95/ec. maximum combined operating conditions for rf power, d.c. bias, and temperature: +23 dbm c.w. @ 10 ma (per diode) @ +85c.
2 spst reflective algaas pin diode switch rev. v5 ma4agsw1 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. electrical specifications @ t amb = 25c (on-wafer measurements) *note: typical switching speed is me asured from 10% to 90% of the detected rf voltage driven by a ttl compatible driver. driver output parallel rc network uses a capacitor between 390 pf - 560 pf and a resistor between 150 - 220 ohms to achieve 10 ns rise and fall times. parameter frequency band min typ max units insertion loss @ -5v 0.05 - 18ghz --- 0.2 0.3 db 18 - 50ghz --- 0.3 0.6 db isolation @ +10ma 0.05 - 18ghz 20 22 --- db 18 - 50ghz 40 46 --- db input return loss @ -5v 0.05 - 18ghz --- 30 --- db 18 - 50ghz --- 16 --- db output return loss @ -5v 0.05 - 18ghz --- 30 --- db 18 - 50ghz --- 16 --- db switching speed * ( 10 % - 90 % rf voltage ) 10ghz --- 10 --- ns
3 spst reflective algaas pin diode switch rev. v5 ma4agsw1 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. typical rf performance (probed on wafer) insertion loss @ -5 v -0.5 -0.4 -0.3 -0.2 -0.1 0 0.00 10.00 20.00 30.00 40.00 50.00 frequency ( ghz ) il ( db ) isolation @ +10 ma -60 -50 -40 -30 -20 -10 0 0.00 10.00 20.00 30.00 40.00 50.00 frequency ( ghz ) isol ( db ) j2
4 spst reflective algaas pin diode switch rev. v5 ma4agsw1 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. typical rf performance (probed on wafer) input return loss @ -5 v -50 -40 -30 -20 -10 0 0.00 10.00 20.00 30.00 40.00 50.00 frequency ( ghz ) irl ( db ) output return loss @ -5 v -50 -40 -30 -20 -10 0 0.00 10.00 20.00 30.00 40.00 50.00 frequency ( ghz ) orl ( db )
5 spst reflective algaas pin diode switch rev. v5 ma4agsw1 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ma4agsw1 schematic with 2-18 ghz bias network operation of the ma4agsw1 switch the application of 0v or a negative dc voltage to either j1 or j2 provides insert ion loss for the ma4agsw1 spst reflective switch. isolation is ac hieved with +10 ma total d.c. current. the forward bias voltage at the diode bias node is typically 1.4 volts for supply currents up to +30 ma and will not exceed 1.6 volts. the backside area of the die is the rf and dc return ground plane. the bi as network design should yield >30 db rf to dc isolation. available for use in conjunction with m/a-com tech?s li ne of algaas switches are two, fully integrated, broad- band, monolithic, bias networks which may be used as an al ternative to the suggested individual component bias network shown below. refer to datasheets for the ma4bn1840-1 and ma4bn1840-2 for additional information. the lowest insertion loss, p1db, ip 3 , and switching speed is achieved by applying a minimum value of | -2v | at d.c. bias node, which is achievable with a standard, 5v ttl controlled pin diode driver. note: the bias network can be connected to either j1 or j2 control level (dc current) rf output state j1 or j2 j1-j2 -5v low loss +10ma isolation typical driver connections
6 spst reflective algaas pin diode switch rev. v5 ma4agsw1 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. chip dimensions and bonding pad locations (in yellow) dim mils millimeters min. max. min. max. a 23.5 25.5 .597 .648 b 14.25 15.25 .362 .387 c 28.50 30.50 .724 .775 d 20.50 21.00 .521 .533 e 3.50 4.50 .089 .114 pads x-y 3.50 4.50 .089 .114
7 spst reflective algaas pin diode switch rev. v5 ma4agsw1 ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. assembly instructions cleanliness these chips should be handled in a clean environment. static sensitivity these devices are considered esd class 0 hbm. proper esd techniques should be used when handling these devices. general handling the protective polymer coating on the active areas of the die provides scratch and impact protection, particularly for the metal air bridge, which contacts the diode?s anode. die should primarily be handled with vacuum pickups, or alternat ively with plastic tweezers. assembly techniques the ma4agsw1, algaas switch is designed to be mounted with electrically conductive silver epoxy or with a lower temperature solder perform, which does not have a rich tin content. solder die attach all die attach and bonding methods should be compatible with gold metal. solder which does not scavenge gold, such as 80/20, au/sn or indalloy #2 is recommended. do not expose die to temperatures greater than 300c for more than 10 seconds. electrical conducti ve epoxy die attach use a controlled thickness of approximately 2 mils for best electrical conductivity and lowest thermal resistance. cure epoxy per manufacturer ?s schedule. typically 150c for 1 hour. ribbon/wire bonding thermo-compression wedge or ball bonding may be used to attach ribbons or wire to the gold bonding pads. a 1/4 x 3 mil gold ribbon is recommended on all rf ports and should be kept as short as possible for the lowest inductance and best microwave performance. for more detailed handling and assembly instructions, see application note m541 , ?bonding and handling procedures for chip diode devices? at www.macomtech.com . ordering information part number package ma4agsw1 waffle pack
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